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SAMSUNG SERIES 850 EVO ULTRASLIM 250GB 2.5" SATA III

MZ-75E250B/EU
99.90 € 99.90 €
Descrição "SAMSUNG SERIES 850 EVO ULTRASLIM 250GB 2.5" SATA III"

http://www.samsung.com/global/business/semiconductor/minisite/SSD/global/images/contents/vimg_ssd850evo_01.jpg

What is 3D V-NAND and how does it differ from existing technology?

Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilizing a smaller footprint.

Optimize daily computing with TurboWrite technology for unrivalled read/write speeds

Achieve the ultimate read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540MB/s) and write (520MB/s) speeds. Plus, you also gain optimized random performance in all QD for client PC usage scenario.


* PCmark7(250GB ) : 6700(840 EVO) < 7600(850 EVO)
** Random Write(QD32,120GB) : 36,000 IOPS(840 EVO) < 88,000 IOPS(850 EVO)

 

Get into the fast lane with the improved RAPID mode

Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilizing unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth.

* PCMARK7 RAW(250GB) : 7500 < 15000(Rapid mode)

Get into the fast lane with the improved RAPID mode

Specifications

  • PRODUCT TYPE

    2.5" SATA III Solid State Drive

  • CAPACITY

    250GB

  • SEQUENTIAL READ SPEED

    Up to 540 MB/sec

  • SEQUENTIAL WRITE SPEED

    Up to 520 MB/sec


Specifications

  Samsung SSD 850 EVO
Usage Application Client PCs
Capacity 250GB
Dimension (W x H x D) 100 x 69.85 x 6.8 (mm)
Interface SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s)
Form factor 2.5 inch
Controller 250GB : Samsung MGX controller
NAND Flash Memory Samsung 32 layer 3D V-NAND
DRAM Cache Memory 512MB(250GB&500GB)
Performance* Sequential Read Max. 540 MB/s
Sequential Write** Max. 520 MB/s
4KB Random Read (QD1) Max. 10,000 IOPS
4KB Random Write (QD1) Max. 40,000 IOPS
4KB Random Read (QD32) Max. 97,000 IOPS(250GB)
4KB Random Write (QD32) Max. 88,000 IOPS(250GB)
Data Security AES 256-bit Full Disk Encryption (FDE)
TCG/Opal V2.0, Encrypted Drive(IEEE1667)
Weight Max. 66g (1TB)
Reliability MTBF: 1.5 million hours
TBW 120/250GB: 75TBW
Power Consumption*** Active Read/Write (Average): Max. 3.7W(1TB) / Max. 4.4W(1TB)
Idle: Max. 50mW
Device Sleep: 2mW(120/250/500GB), 4mW(1TB)
Supporting features TRIM(Required OS support), Garbage Collection, S.M.A.R.T.
Temperature Operating: 0°C to 70°C
Non-Operating: -40°C to 85°C
Humidity 5% to 95%, non-condensing
Vibration Non-Operating: 20~2000Hz, 20G
Shock Non-Operating: 1500G, duration 0.5m sec, 3 axis

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